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Silicon Bipolar Low Noise Microwave Transistors
Features
* Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) * High Power Gain At 1.0 GHz - 18.0 dB Typical * Gold Metalization * Hermetic and Surface Mount Packages Available * Can be Screened to JANTX, JANTXV Equivalent Levels * ION Implanted arsenic Emitter for Consistent Performance
MP42141
Case Styles
Description
This NPN Silicon transistor finds applications in low noise and medium power microwave amplifier circuitry. The MP42141 exhibits an excellent noise figure characteristic over the frequency range of .5 to 2 GHz. This transistor also features good high frequency current gain at medium current levels.
Applications
RF amplifiers and low level oscillators.
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
Absolute Maximum Ratings MP42141 Series
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Operating Temperature Storage Temperature Chip or Ceramic Packages Plastic Packages Total Power Dissipation at 25C 509 Case Style 510 Case Style 35 Case Style 400 mW 700 mW 700 mW VCBO VCEO VEBO IC Tj 27 V 20 V 1.5 V 50 mA 200C -65C to +200C -65C to +125C
MP42141 Series
Electrical Specifications @ 25C
MP42141 Series
Parameter of Test Gain Bandwidth Product Condition VCE = 10 volts Fm =1.0 GHz Ic = 15 mA VCE = 15 volts IC = 15 mA f = 1 GHz f = 2 GHz VCE = 10 volts IC = 5 mA f = 1 GHz f = 2 GHz VCE = 10 volts IC = 15 mA f = 1 GHz VCE = 10 volts IC = 10 mA f = 1 GHz Symbol fT Units GHz MP4214100 Chip 4.1 typ MP4214135 Micro-X ----MP42141-509 TO-72 -----
Insertion Power Gain
|S21E|2
dB 13 typ 7 typ 13 typ 7 min 11 typ 5 typ
Noise Figure
NF
dB 2.0 typ 3.4 typ 2.0 typ 3.4 typ 2.3 typ 3.6 typ
Unilateral Gain
GTU (max)
dB 17 typ 17 typ 14 typ
Power Out at 1 dB Compression Z=OPT
P1dB
dBm N/A +7 typ +4 typ
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
Electrical Specifications @ 25C MP42141 Series
Parameter Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Condition VCB = 10 volts IE = 0 A VEB = 1 volt IC = 0 A VCE = 10 volts IC = 5 mA VCB = 15 volts f = 1 MHz Symbol ICBO IEBO hFE CCB Min 20 Typical 125 ----
MP42141 Series
Max 100 1 250 1.0
Units nA A pF (35)
Typical Scattering Parameters MP42141-511, VCE = 10 Volts, IC = 5 mA
Frequency (MHz) 400 500 800 1200 1600 2000 2400 2800 3200 3600 4000 4400 4800 5000 S11E Mag. .626 .618 .577 .566 .661 .561 .597 .506 .630 .651 .643 .643 .656 .652 Angle -112.9 -125.0 -150.8 -170.1 -175.9 166.2 156.6 147.8 141.1 133.7 132.9 127.7 122.7 120.1 Mag. 7.563 6.425 4.363 3.073 2.344 1.894 1.608 1.408 1.200 1.072 .933 .796 .702 .657 S21E Angle 110.3 102.1 84.7 67.7 54.1 43.2 30.6 17.9 6.8 -4.6 -6.5 -18.4 -28.8 -34.1 Mag. .044 .046 .054 .062 .069 .078 .084 .093 .099 .106 .109 .112 .123 .123 S12E Angle 43.0 38.9 34.3 32.9 32.6 32.6 30.3 27.0 24.6 21.7 24.7 21.4 17.0 14.0 Mag .726 .660 .616 .577 .578 .571 .572 .565 .583 .597 .599 .637 .686 .693 S22E Angle -34.3 -32.9 -38.6 -43.1 -50.4 -63.6 -70.8 -81.4 -90.7 -102.6 -109.2 -121.6 -135.2 -142.1
MP42141-511, VCE = 15 Volts, IC = 15 mA
Frequency (MHz) 400 500 800 1200 1600 2000 2400 2800 3200 3600 4000 4400 4800 5000 S11E Mag. .537 .547 .548 .550 .562 .579 .601 .608 .643 .657 .654 .648 .665 .650 Angle -143.2 -152.2 -170.2 -176.9 166.4 158.8 150.8 143.3 137.0 130.1 129.7 124.6 120.1 117.2 Mag. 10.294 8.564 5.694 3.867 2.946 2.383 2.010 1.755 1.505 1.338 1.188 1.017 .905 .849 S21E Angle 100.9 93.7 79.2 65.9 53.6 43.8 32.1 20.0 10.4 -.0 -1.4 -13.3 -23.4 -28.9 Mag. .026 .028 .036 .046 .056 .067 .074 .083 .091 .098 .104 .107 .120 .121 S12E Angle 45.4 46.0 47.2 48.7 48.0 47.2 43.4 39.7 36.6 33.5 36.2 32.5 27.5 24.4 Mag .608 .569 .562 .532 .539 .539 .537 .530 .553 .560 .565 .600 .648 .657 S22E Angle -31.2 -29.3 -33.5 -37.3 -43.9 -56.9 -63.4 -73.5 -82.5 -94.1 -99.8 -112.7 -125.9 -133.0
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP42141 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4214135 Micro-X
Emitter F 4 PLCS. E H
MP42141 Series
MP4214135
DIM. A B C D E F G H INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45 MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.46 0.56 3.81 0.08 0.15 45
Collector B
Base
Emitter
A C
G
D
MP42141-509 TO-72 MP42141-509
INCHES DIM A B C D E F G H J K L MIN. 0.350 0.240 0.315 MAX. 0.370 0.260 0.335 0.040 MILLIMETERS MIN. MAX. 8,89 6,11 8,00 9,40 6,60 8,51 1,02
0.500 0.016 0.021 0.190 0.210 89 DEG 91 DEG 0.029 0.043 43 DEG 47 DEG 0.028 0.034
12,70 0,41 0,53 4,83 5,33 89 DEG 91 DEG 0,74 1,09 43 DEG 47 DEG 0,71 0,86
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440

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